Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

被引：15

作者：

Bakowski, Mietek ^{[1
]}

Ranstad, Per ^{[2
]}

Lim, Jang-Kwon ^{[1
]}

Kaplan, Wlodek ^{[1
]}

Reshanov, Sergey A. ^{[1
]}

Schoner, Adolf ^{[1
]}

Giezendanner, Florian ^{[2
]}

Ranstad, Anton ^{[2
]}

机构：

[1] Acreo Swedish ICT AB, S-16440 Kista, Sweden

[2] Alstom Power Sweden AB, S-35112 Vaxjo, Sweden

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 02期

关键词：

4H-SiC; avalanche energy; bipolar degradation; carrier lifetime; dynamic ON-resistance; Junction Termination Extension (JTE); p-i-n diode; soft switching; SIMULATION;

D O I：

10.1109/TED.2014.2361165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter.

引用

页码：366 / 373

页数：8

共 19 条

[1] Merits of Buried Grid Technology for Advanced SiC Device Concepts [J].