Si nanocrystal synthesis in HfO2/SiO/HfO2 multilayer structures

被引：16

作者：

Perego, M. ^{[1
]}

Seguini, G. ^{[1
]}

Wiemer, C. ^{[1
]}

Fanciulli, M. ^{[1
,2
]}

Coulon, P-E ^{[3
]}

Bonafos, C. ^{[3
]}

机构：

[1] INFM, Lab Nazl MDM CNR, I-20041 Agrate Brianza, MI, Italy

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20126 Milan, Italy

[3] CNRS, CEMES, nMat Grp, FR-31055 Toulouse, France

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 05期

关键词：

THIN OXIDE LAYERS; SILICON NANOCRYSTALS; STABILITY; MEMORIES; DIELECTRICS; DIFFUSION; HFO2;

D O I：

10.1088/0957-4484/21/5/055606

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The synthesis of two-dimensional arrays of Si nanocrystals in an HfO2 matrix has been achieved by deposition of HfO2/SiO/HfO2 multilayer structures followed by high temperature (1100 degrees C) thermal treatment in nitrogen atmosphere. Silicon out-diffusion from the SiO layer through the HfO2 films has been shown to be the limiting factor in the formation of the Si nanocrystals. Suitable strategies have been identified in order to overcome this limitation. Si nanocrystal formation has been achieved by properly adjusting the thickness of the SiO layer.

引用

页数：7

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