Band insulator to Mott insulator transition in a bilayer Hubbard model

被引:60
作者
Kancharla, S. S. [1 ]
Okamoto, S. [1 ]
机构
[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
关键词
D O I
10.1103/PhysRevB.75.193103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The ground-state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean-field theory. For weak to intermediate values of Coulomb repulsion U, the system undergoes a transition from a Mott-insulating phase to a metallic phase and then onto a band-insulating phase as the interlayer hopping is increased. In the strong-coupling case, the model exhibits a direct crossover from a Mott-insulating phase to a band-insulating phase. These results are robust with respect to the presence or absence of magnetic order.
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