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Nanomechanical detection of the spin Hall effect
被引:4
|作者:
Boales, J. A.
[1
]
Boone, C. T.
[1
]
Mohanty, P.
[1
]
机构:
[1] Boston Univ, Dept Phys, 590 Commonwealth Ave, Boston, MA 02215 USA
关键词:
ELECTRONIC MEASUREMENT;
OSCILLATOR DRIVEN;
SEMICONDUCTORS;
SILICON;
D O I:
10.1103/PhysRevB.93.161414
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The spin Hall effect creates a spin current in response to a charge current in a material that has strong spin-orbit coupling. The size of the spin Hall effect in many materials is disputed, requiring independent measurements of the effect. We develop a novel mechanical method to measure the size of the spin Hall effect, relying on the equivalence between spin and angular momentum. The spin current carries angular momentum, so the flow of angular momentum will result in a mechanical torque on the material. We determine the size and geometry of this torque and demonstrate that it can be measured using a nanomechanical device. Our results show that measurement of the spin Hall effect in this manner is possible and also opens possibilities for actuating nanomechanical systems with spin currents.
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页数:5
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