High-Q microresonators integrated with microheaters on a 3C-SiC-on-insulator platform

被引:37
|
作者
Wu, Xi [1 ]
Fan, Tianren [1 ]
Eftekhar, Ali A. [1 ]
Adibi, Ali [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
SILICON; RESISTIVITY; THERMOPOWER;
D O I
10.1364/OL.44.004941
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate, to the best of our knowledge, the first thermally reconfigurable high-Q silicon carbide (SiC) microring resonators with integrated microheaters on a 3C-SiC-on-insulator platform. We extract a thermo-optic coefficient of around 2.67 x 10(-5)/K for 3C-SiC from wavelength shift of a resonator heated by a hot plate. Finally, we fabricate a 40-pm-radius microring resonator with intrinsic Q of 139,000 at infrared wavelengths (similar to 1550 nm) after integration with a NiCr microheater. By applying current through the microheater, a resonance shift of 30 pm/mW is achieved in the microring, corresponding to similar to 50 mW per pi phase shift. This platform offers an easy and reliable way for integration with electronic devices as well as great potential for diverse integrated optics applications. (C) 2019 Optical Society of America
引用
收藏
页码:4941 / 4944
页数:4
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