Diamond heat spreaders for high power devices with integrated temperature sensors

被引：7

作者：

Bonhaus, J ^{[1
]}

Borchert, D ^{[1
]}

Denisenko, A ^{[1
]}

Fahrner, WR ^{[1
]}

机构：

[1] Univ Hagen, Chair Elect Devices, D-58084 Hagen, Germany

来源：

FOURTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM | 1998年

关键词：

D O I：

10.1109/STHERM.1998.660399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the three dimensional FEM software abaqus the use of a polycrystalline diamond film as a heat spreader in a laser diode array device was optimized. A decrease of the thermal resistance of the device of nearly 50% could be achieved. A structured metallization was produced on top of the diamond to address each laser diode separately. Between the metallization strips one thermistor per gap was inserted by doping the diamond film with boron by ion implantation. For calibrating these thermistors their R(T) characteristics were investigated. In comparison with commercially available thermistors based on silicon or platinum these thermistors showed a higher temperature coefficient of resistance and thus higher sensitivity. Additionally, the absolute resistance values were in a practicable range. This offers the possibility for an industrial use. With the investigated temperature sensors one can detect a shift of the wavelength of the emitted laser diode light due to a change of their temperature of less than 0.1 nm.

引用

页码：139 / 146

页数：8