Vacancies in Hg1-xCdxTe

Measurements have been performed of the carrier concentrations in vacancy-doped Hg1-xCdxTe with x = 0.22, 0.29, 0.45, and 0.5. Anneals to establish the carrier concentrations were performed on both the mercury- and tellurium-rich sides of the phase field. When these results were added to earlier data for x = 0.2 and 0.4, and assuming that all vacancies are doubly ionized, then vacancy concentrations for all values of x and anneal temperature can be represented by simple equations. On the mercury side of the phase field, the vacancy concentrations varied as 2.50 x 10(23)(1-x) exp[-1.00/kT] for low concentrations, and as 3.97 x 10(7)(1-x)(1/3)n(i)(2/3) exp[-0.33/kT] for high concentrations, where n(i) is the intrinsic carrier concentration. On the tellurium rich side, the vacancy concentrations varied as 2.81 x 10(22)(1-x) exp[-0.65/kT] for low concentrations and as 1.92 x 10(7)(1-x)(1/3)n(i)(2/3) exp[-0.22/kT] for high concentrations.