Refractive index, absorption coefficient, and photoelastic constant: Key parameters of ingaas material relevant to ingaas-based device performance

被引：21

作者：

Alam, M. S. ^{[1
]}

Rahman, M. S. ^{[1
]}

Islam, M. R. ^{[1
]}

Bhuiyan, A. G. ^{[1
]}

Yamada, M. ^{[2
]}

机构：

[1] Khulna Univ Engn & Technol, Dept Elect & Elect Engn, Khulna 920300, Bangladesh

[2] Kyoto Inst Technol, Dept Elect, Sakyoku Ku, Kyoto 6068585, Japan

来源：

2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2007年

关键词：

D O I：

10.1109/ICIPRM.2007.381193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A theoretical study has been carried out to evaluate key parameters of InxGa1-xAs material at energies below the direct band edge. The spectral dependence of refractive index, absorption coefficient, and photoelastic constants are evaluated for the whole composition range in InxGa1-xAs material on the basis of simplified models of the interband transitions. The results obtained from the present study are compared with the experimental results and found to be in good agreement. We have also evaluated refractive-index steps between InGal-,As and GaAs materials for variety of waveguiding device applications.

引用

页码：343 / 346

页数：4

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