Internal efficiency analysis of 280 nm light emitting diodes

被引：21

作者：

Piprek, J ^{[1
]}

Moe, C ^{[1
]}

Keller, S ^{[1
]}

Nakamura, S ^{[1
]}

DenBaars, SP ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Solid State Lighting & Display Ctr, Santa Barbara, CA 93106 USA

来源：

PHYSICS AND APPLICATIONS OF OPTOELECTRONIC DEVICES | 2004年 / 5594卷

关键词：

ultraviolet light source; light-emitting diode; LED; AlGaN quantum wells; internal quantum efficiency; current leakage; numerical simulation;

D O I：

10.1117/12.567084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compact ultraviolet light sources are currently of high interest for a range of applications, including solid-state lighting, short-range communication, and bio-chemical detection. We report on the design and analysis of AlGaN-based light-emitting diodes with an emission wavelength near 280 nm. Internal device physics is investigated by three-dimensional numerical simulation. The simulation incorporates a drift-diffusion model for the carrier transport, built-in polarization, the wurtzite energy band-structure of strained quantum wells, as well as radiative and nonradiative carrier recombination. Critical material parameters are identified and their impact on the simulation results is investigated. Limitations of the internal quantum efficiency by electron leakage and nonradiative recombination are analyzed. Increasing the stopper layer bandgap is predicted to improve the quantum efficiency and the light output of our LED substantially.

引用

页码：177 / 184

页数：8

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