Resistive switching and synaptic plasticity in HfO2-based memristors with single-layer and bilayer structures

被引：0

作者：

Duan, Qingxi ^{[1
]}

Xu, Liying ^{[1
]}

Zhu, Jiadi ^{[1
]}

Sun, Xinhao ^{[1
]}

Yang, Yuchao ^{[1
]}

Huang, Ru ^{[1
]}

机构：

[1] Peking Univ, Key Lab Microelect Devices & Circuits MOE, Inst Microelect, Beijing 100871, Peoples R China

来源：

2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2018年

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

memristor; synaptic plasticity; conducting filament; oxygen vacancy; DEVICE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Here we report a device size and structure dependent study on the resisitive switching and synaptic plasticity in HfO2-based memristive devices. We found that the on/off ratio of resistive switching constantly increases as device size decreases, and bilayer Pt/TaOx/HfO2/Pt devices generally exhibit more uniform switching characteristics and lower threshold voltages compared with single-layer Pt/HfO2/Pt devices. Long-term potentiation and depression behaviors have been emulated using such bilayer devices, suggesting potential applications for neuromorphic hardware.

引用

页数：3

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