Laser fluence and spot size effect on compositional and structural properties of BiFeO3 thin films grown by Pulsed Laser Deposition

被引：13
作者：
Jaber, N. [1 ]
Wolfman, J. [1 ]
Daumont, C. [1 ]
Negulescu, B. [1 ]
Ruyter, A. [1 ]
Sauvage, T. [2 ]
Courtois, B. [2 ]
Bouyanfif, H. [3 ]
Longuet, J. L. [4 ]
Autret-Lambert, C. [1 ]
Gervais, F. [1 ]
机构：
[1] Univ Tours, CNRS, UMR7347, Lab GREMAN,Fac Sci & Tech, F-37200 Tours, France
[2] CNRS, UPR3079, Lab CEMHTI, Site Cyclotron, F-45071 Orleans 2, France
[3] Univ Jules Vernes Picardie Amiens, Lab LPMC, Amiens, France
[4] CEA, DAM, F-37260 Le Ripault, Monts, France
来源：
THIN SOLID FILMS | 2017年 / 634卷
关键词：
Pulsed Laser Deposition; Excimer laser; Oxide thin film; BiFeO3; WDS film analysis; POLARIZATION; TRANSITIONS; ABLATION;
D O I：
10.1016/j.tsf.2017.05.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the effect of laser fluence and spot size on the structure and composition of BiFeO3 (BFO) epitaxial thin films grown on SrTiO3 substrates by Pulsed Laser Deposition. X-ray diffraction shows that BFO's out of plane lattice parameter increases with the laser fluence. A coherent epitaxial film growth is observed for all tested laser fluences and spot sizes for thicknesses up to 16 nm. The critical thickness at which relaxation occurs depends either on the laser fluence or spot size. The fluence dependence of the out of plane lattice parameter is accompanied with a cationic composition variation. Bi vacancies are evidenced at lower fluences while as Bi/Fe tends towards 1 a higher relaxation critical thickness is observed. An optimum Bi/Fe ratio is obtained for a fluence of 1.72 J/cm(2). This result was confirmed by wavelength-dispersive x-ray spectroscopy (WDS) scans over a 1 cm(2) film. An excellent thickness and composition uniformity is attained over the entire sample area. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：107 / 111
页数：5
相关论文
共 22 条
[1]   Influence of parasitic phases on the properties of BiFeO3 epitaxial thin films -: art. no. 072508 [J].
Béa, H ;
Bibes, M ;
Barthélémy, A ;
Bouzehouane, K ;
Jacquet, E ;
Khodan, A ;
Contour, JP ;
Fusil, S ;
Wyczisk, F ;
Forget, A ;
Lebeugle, D ;
Colson, D ;
Viret, M .
APPLIED PHYSICS LETTERS, 2005, 87 (07)
[2]   Physics and Applications of Bismuth Ferrite [J].
Catalan, Gustau ;
Scott, James F. .
ADVANCED MATERIALS, 2009, 21 (24) :2463-2485
[3]   Mechanisms affecting kinetic energies of laser-ablated materials [J].
Chen, KR ;
Leboeuf, JN ;
Wood, RF ;
Geohegan, DB ;
Donato, JM ;
Liu, CL ;
Puretzky, AA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03) :1111-1114
[4]   Mechanism of incongruent ablation of SrTiO3 [J].
Dam, B ;
Rector, JH ;
Johansson, J ;
Huijbregtse, J ;
De Groot, DG .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3386-3389
[5]   Comment on "Epitaxial BiFeO3 multiferroic thin film heterostructures" [J].
Eerenstein, W ;
Morrison, FD ;
Dho, J ;
Blamire, MG ;
Scott, JF ;
Mathur, ND .
SCIENCE, 2005, 307 (5713) :1203-1203
[6]   DYNAMICS OF LASER-ABLATION PLUME PENETRATION THROUGH LOW-PRESSURE BACKGROUND GASES [J].
GEOHEGAN, DB ;
PURETZKY, AA .
APPLIED PHYSICS LETTERS, 1995, 67 (02) :197-199
[7]   Metal-insulator transitions [J].
Imada, M ;
Fujimori, A ;
Tokura, Y .
REVIEWS OF MODERN PHYSICS, 1998, 70 (04) :1039-1263
[8]   Enhancement of piezoelectric response in Ga doped BiFeO3 epitaxial thin films [J].
Jaber, N. ;
Wolfman, J. ;
Daumont, C. ;
Negulescu, B. ;
Ruyter, A. ;
Feuillard, G. ;
Bavencoffe, M. ;
Fortineau, J. ;
Sauvage, T. ;
Courtois, B. ;
Bouyanfif, H. ;
Longuet, J. L. ;
Autret-Lambert, C. ;
Gervais, F. .
JOURNAL OF APPLIED PHYSICS, 2015, 117 (24)
[9]   DIFFERENTIAL THERMAL-ANALYSIS OF PHASE-TRANSITIONS IN (BI1-XLAX)FEO3 SOLID-SOLUTION [J].
KACZMAREK, W ;
PAJAK, Z ;
POLOMSKA, M .
SOLID STATE COMMUNICATIONS, 1975, 17 (07) :807-810
[10]   Controlled cation stoichiometry in pulsed laser deposition-grown BaTiO3 epitaxial thin films with laser fluence [J].
Kan, Daisuke ;
Shimakawa, Yuichi .
APPLIED PHYSICS LETTERS, 2011, 99 (08)
123