Hot carrier luminescence during porous etching of GaP under high electric field conditions

被引：13
作者：
van Driel, AF
Bret, BPJ
Vanmaekelbergh, D
Kelly, JJ
机构：
[1] Univ Utrecht, Debye Inst Chem Condensed Matter, NL-3508 TA Utrecht, Netherlands
[2] Univ Amsterdam, Van Der Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands
来源：
SURFACE SCIENCE | 2003年 / 529卷 / 1-2期
关键词：
electron-solid interactions; electrochemical methods; electroluminescence; field emission; porous solids; gallium phosphide;
D O I：
10.1016/S0039-6028(03)00262-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Electroluminescence is observed during porous etching of n-type GaP single crystals at strongly positive potential. The emission spectra, which include a supra-bandgap contribution, are markedly different from the spectra observed under optical excitation or minority carrier injection. The current density:and electroluminescence intensity show a strong potential dependence and a similar hysteresis. The spectral characteristics of the luminescence suggest that both thermalised and hot charge carriers, generated by impact ionisation, are involved in light emission. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：197 / 203
页数：7
相关论文
共 33 条
[1]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[2]  
BURNS G, 1985, SOLID STATE PHYSICS
[3]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[4]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[5]   Morphology and strongly enhanced photoresponse of GaP electrodes made porous by anodic etching [J].
Erne, BH ;
Vanmaekelbergh, D ;
Kelly, JJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (01) :305-314
[6]   POROUS ETCHING - A MEANS TO ENHANCE THE PHOTORESPONSE OF INDIRECT SEMICONDUCTORS [J].
ERNE, BH ;
VANMAEKELBERGH, D ;
KELLY, JJ .
ADVANCED MATERIALS, 1995, 7 (08) :739-742
[7]   ELECTROLUMINESCENCE AT P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].
GERSHENZON, M ;
MIKULYAK, RM .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (07) :1338-&
[8]  
GJERKSTRA RW, 2002, ELECTROCHEM SOLID ST, V5, pG32
[9]   RADIATIVE RECOMBINATION IN GALLIUM PHOSPHIDE POINT-CONTACT DIODES [J].
GORTON, HC ;
SWARTZ, JM ;
PEET, CS .
NATURE, 1960, 188 (4747) :303-304
[10]   Anisotropic diffusion of light in a strongly scattering material [J].
Johnson, PM ;
Bret, BPJ ;
Rivas, JG ;
Kelly, JJ ;
Lagendijk, A .
PHYSICAL REVIEW LETTERS, 2002, 89 (24)
1234