Microstructure and ferroelectric properties of sol-gel derived Bi3.15Nd0.85Ti3O12 thin films on Pt/Ti/SiO2/Si(100)

被引：41
作者：
Li, JH
Qiao, Y
Liu, XL
Nie, CJ
Lu, CJ [1 ]
Xu, ZX
Wang, SM
Zhang, NX
Xie, D
Yu, HC
Li, JQ
机构：
[1] Hubei Univ, Dept Phys, Wuhan 430062, Hubei, Peoples R China
[2] Hubei Univ, Dept Chem, Wuhan 430062, Hubei, Peoples R China
[3] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
[4] Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.1803913
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Bi3.15Nd0.85Ti3O12 (BNdT) thin films were deposited on Pt/Ti/SiO2/Si Substrates using a sol-gel process. The film annealed at 750degreesC is composed of grains of 50-100 nm in diameter. The fine grains show nearly random orientations. "Micropores" were frequently observed at the junctions of the grains and they are mostly amorphous, while sometimes containing very fine crystalline particles with sizes of only a few nanometers. The BNdT film capacitors with a Pt top electrode showed excellent ferroelectric properties. The remanent polarization and the coercive field were in the range of 41-43 muC/cm(2) and 70-84 kV/cm, respectively. The BNdT capacitors did not show any significant fatigue up to 5 X 10(9) switching cycles at a frequency of 1 MHz. (C) 2004 American Institute of Physics.
引用
收藏
页码：3193 / 3195
页数：3
相关论文
共 10 条
[1]   Formation and characteristics of highly c-axis-oriented Bi3.25La0.75Ti3O12 thin films on SiO2/Si(100) and Pt/Ti/SiO2/Si(100) substrates [J].
Chon, U ;
Jang, HM ;
Lee, SH ;
Yi, GC .
JOURNAL OF MATERIALS RESEARCH, 2001, 16 (11) :3124-3132
[2]   Layered perovskites with giant spontaneous polarizations for nonvolatile memories [J].
Chon, U ;
Jang, HM ;
Kim, MG ;
Chang, CH .
PHYSICAL REVIEW LETTERS, 2002, 89 (08) :1-087601
[3]   ELECTRICAL AND OPTICAL PROPERTIES OF FERROELECTRIC BI4TI3O12 SINGLE CRYSTALS [J].
CUMMINS, SE ;
CROSS, LE .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (05) :2268-&
[4]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[5]   Orientation dependence of ferroelectric properties of pulsed-laser-ablated Bi4-xNdxTi3O12 films [J].
Garg, A ;
Barber, ZH ;
Dawber, M ;
Scott, JF ;
Snedden, A ;
Lightfoot, P .
APPLIED PHYSICS LETTERS, 2003, 83 (12) :2414-2416
[6]   SWITCHING, FATIGUE, AND RETENTION IN FERROELECTRIC BI4TI3O12 THIN-FILMS [J].
JOSHI, PC ;
KRUPANIDHI, SB .
APPLIED PHYSICS LETTERS, 1993, 62 (16) :1928-1930
[7]   Direct evidence of A-site-deficient strontium bismuth tantalate and its enhanced ferroelectric properties -: art. no. 214102 [J].
Noguchi, Y ;
Miyayama, M ;
Kudo, T .
PHYSICAL REVIEW B, 2001, 63 (21)
[8]   Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].
Park, BH ;
Kang, BS ;
Bu, SD ;
Noh, TW ;
Lee, J ;
Jo, W .
NATURE, 1999, 401 (6754) :682-684
[9]   STRUCTURE REFINEMENT OF COMMENSURATELY MODULATED BISMUTH STRONTIUM TANTALATE, BI2SRTA2O9 [J].
RAE, AD ;
THOMPSON, JG ;
WITHERS, RL .
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE, 1992, 48 :418-428
[10]   Enhanced electrical properties of c-axis epitaxial Nd-substituted Bi4Ti3O12 thin films [J].
Zhang, ST ;
Zhang, XJ ;
Cheng, HW ;
Chen, YF ;
Liu, ZG ;
Ming, NB ;
Hu, XB ;
Wang, JY .
APPLIED PHYSICS LETTERS, 2003, 83 (21) :4378-4380
1