Self-assembling of nanovoids in 800-keV Ge-implanted Si/SiGe multilayered structures

被引：15

作者：

Gaiduk, PI ^{[1
]}

Larsen, AN

Hansen, JL

Wendler, E

Wesch, W

机构：

[1] Aarhus Univ, Dept Phys & Astron, DK-8000 Aarhus C, Denmark

[2] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.67.235311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the self-assembled formation of spherically shaped voids in a Si/SiGe layered structure after 800-keV Ge ion implantation followed by rapid thermal annealing. The voids are of nanometer size and are solely assembled in thin SiGe quantum wells in the surface region (<R-p/2) of the implanted sample. The results are discussed in terms of the separation of the vacancy and interstitial depth profiles attributed to the preferential forward momentum of recoiling Si atoms. The strain situation around the SiGe quantum wells is suggested as a possible reason for the void self-assembling effect.

引用

页数：4

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