Bipolar resistive switching and its temperature dependence in the composite structure of BiFeO3 bilayer

被引：4

作者：

Ma, W. J. ^{[1
,2
,3
]}

Xiong, W. M. ^{[1
,2
]}

Zhang, X. Y. ^{[1
,2
]}

Wang, Ying ^{[1
,2
]}

Zhang, H. Y. ^{[1
,2
]}

Wang, C. Q. ^{[1
,2
]}

Wang, Biao ^{[1
]}

Zheng, Yue ^{[1
,2
]}

机构：

[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China

[2] Sun Yat Sen Univ, Micro&Nano Phys & Mech Res Lab, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China

[3] SIPO, Patent Examinat Cooperat Ctr, Patent Off, Guangzhou 510535, Guangdong, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 04期

基金：

中国国家自然科学基金;

关键词：

TRANSITION;

D O I：

10.1007/s00339-016-9872-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to demonstrate the control of BiFeO3 thin film on the resistive switching effect and achieve the high-performance resistive switching device, the single layers and bilayer have been fabricated by chemical solution deposition method, respectively. In comparison with the single films, the composite film exhibits great performance of the resistive switching in endurance and repeatability, high stability and resistance ratio of high resistance state to low resistance state. Resistive switching effect in the BiFeO3 composite structure demonstrates an effective way to improve the endurance and repeatability of the resistive switching characteristics by designing the relative devices.

引用

页数：7

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