XPS characterization on the Mn-doped BST thin films prepared by sol-gel method

被引：9
作者：
Bao, JB
Ren, TL [1 ]
Liu, JS
Wang, XN
Liu, LT
Li, ZJ
Li, XJ
机构：
[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China
[2] Huazhong Univ Sci & Technol, Dept Solid Elect, Wuhan 430074, Peoples R China
来源：
INTEGRATED FERROELECTRICS | 2002年 / 45卷
关键词：
BST thin film; BaSrTiO3; Mn(II)-doped; Sol-Gel; XPS ESCA;
D O I：
10.1080/10584580190043921
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Undoped and Mn(II)-doped barium strontium titanate (BST) thin films have been prepared by a "water based" sol-gel method. With this method, BST stock solution can be easily doped with any concentration of aqueous metal ion solution and can be stocked for 3similar to4 days at room temperature. The crystallization temperature of 650squaresimilar to750square is suitable for the films from traded-off of both the X-ray diffraction (XRD) patterns and the surface topography. The Mn 2p(3/2) X-ray photoelectron spectra (XPS) pattern is given for the first time in the thin film and shows the valence state of the Mn-doped BST has a same valance with the Mn(II) dopant. Considering the peak shift of the binding energy, it is proposed that the Fermi level of the Mn-doped BST has been shifted down by 0.7 eV.
引用
收藏
页码：31 / 38
页数：8
相关论文
共 12 条
  • [1] Surface characterisation of spinels with Ti(IV) distributed in tetrahedral and octahedral sites
    Arillo, MA
    López, ML
    Pico, C
    Veiga, ML
    Jiménez-López, A
    Rodríguez-Castellón, E
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2001, 317 : 160 - 163
  • [2] Effect of donor and acceptor dopants on Schottky barrier heights and vacancy concentrations in barium strontium titanate
    Dawber, M
    Scott, JF
    Hartmann, AJ
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) : 1633 - 1636
  • [3] Dopant influence on dielectric losses, leakage behaviour, and resistance degradation of SrTiO3 thin films
    Hofman, W
    Hoffmann, S
    Waser, R
    [J]. THIN SOLID FILMS, 1997, 305 (1-2) : 66 - 73
  • [4] Leakage current behaviors of acceptor- and donor-doped (Ba0.5Sr0.5)TiO3 thin films
    Kim, SS
    Park, C
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (17) : 2554 - 2556
  • [5] Alternative dielectrics to silicon dioxide for memory and logic devices
    Kingon, AI
    Maria, JP
    Streiffer, SK
    [J]. NATURE, 2000, 406 (6799) : 1032 - 1038
  • [6] Dielectric characteristics of doped Ba1-xSrxTiO3 at the paraelectric state
    Liou, JW
    Chiou, BS
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 1997, 51 (01) : 59 - 63
  • [7] Moulder J.F., 1995, HDB XRAY PHOTOELECTR
  • [8] MULLER KA, 1959, PHYS REV LETT, V2, P241
  • [9] Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate
    Robertson, J
    Chen, CW
    [J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1168 - 1170
  • [10] SWITCHING KINETICS OF LEAD ZIRCONATE TITANATE SUB-MICRON THIN-FILM MEMORIES
    SCOTT, JF
    KAMMERDINER, L
    PARRIS, M
    TRAYNOR, S
    OTTENBACHER, V
    SHAWABKEH, A
    OLIVER, WF
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 787 - 792
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