Highly efficient bilateral doping of single-walled carbon nanotubes

被引:25
作者
Goldt, Anastasia E. [1 ]
Zaremba, Orysia T. [1 ]
Bulavskiy, Mikhail O. [1 ]
Fedorov, Fedor S. [1 ]
Larionov, Konstantin, V [2 ,3 ]
Tsapenko, Alexey P. [4 ]
Popov, Zakhar, I [2 ,5 ]
Sorokin, Pavel [2 ,3 ]
Anisimov, Anton S. [6 ]
Inani, Heena [7 ]
Kotakoski, Jani [7 ]
Mustonen, Kimmo [7 ]
Nasibulin, Albert G. [1 ,8 ]
机构
[1] Skolkovo Inst Sci & Technol, 3 Nobel St, Moscow 121205, Russia
[2] Natl Univ Sci & Technol MISiS, Leninsky Prospect 4, Moscow 119049, Russia
[3] Moscow Inst Phys & Technol, Inst Skiy Lane 9, Moscow 141700, Russia
[4] Aalto Univ, Dept Appl Phys, Puumiehenkuja 2, Espoo 00076, Finland
[5] RAS, Emanuel Inst Biochem Phys, Moscow 119334, Russia
[6] Canatu Ltd, Konalankuja 5, Helsinki 00390, Finland
[7] Univ Vienna, Fac Phys, Boltzmanngasse 5, A-1090 Vienna, Austria
[8] Aalto Univ, Sch Chem Engn, Kemistintie 1, Espoo 16100, Finland
基金
俄罗斯科学基金会;
关键词
CRYSTAL-STRUCTURE; TRANSPARENT; FABRICATION; FILMS; OXIDE;
D O I
10.1039/d0tc05996j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A boost in the development of flexible and wearable electronics facilitates the design of new materials to be applied as transparent conducting films (TCFs). Although single-walled carbon nanotube (SWCNT) films are the most promising candidates for flexible TCFs, they still do not meet optoelectronic requirements demanded for their successful industrial integration. In this study, we proposed and thoroughly investigated a new approach that comprises simultaneous bilateral (outer and inner surface) SWCNT doping after their opening by thermal treatment at 400 degrees C under an ambient air atmosphere. Doping by a chloroauric acid (HAuCl4) ethanol solution allowed us to achieve the record value of equivalent sheet resistance of 31 +/- 4 omega sq(-1) at a transmittance of 90% in the middle of the visible spectrum (550 nm). The strong p-doping was examined by open-circuit potential (OCP) measurements and confirmed by ab initio calculations demonstrating a downshift of the Fermi level of around 1 eV for the case of bilateral doping.
引用
收藏
页码:4514 / 4521
页数:8
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