Surface reconstructions in molecular beam epitaxy of SrTiO3

被引：42

作者：

Kajdos, Adam P. ^{[1
]}

Stemmer, Susanne ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 19期

基金：

美国国家科学基金会;

关键词：

CHEMICAL-VAPOR-DEPOSITION; INTENSITY OSCILLATIONS; THIN-FILMS; STOICHIOMETRY; GROWTH; MORPHOLOGY; CHEMISTRY;

D O I：

10.1063/1.4901726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that reflection high-energy electron diffraction (RHEED) can be used as a highly sensitive tool to track surface and resulting film stoichiometry in adsorption-limited molecular beam epitaxy of (001) SrTiO3 thin films. Even under growth conditions that yield films with a lattice parameter that is identical to that of stoichiometric bulk crystals within the detection limit of high-resolution x-ray diffraction (XRD), changes in surface reconstruction occur from (1 x 1) to (2 x 1) to c(4 x 4) as the equivalent beam pressure of the Ti metalorganic source is increased. These surface reconstructions are correlated with a shift from mixed SrO/TiO2 termination to pure TiO2 termination. The crossover to TiO2 surface termination is also apparent in a phase shift in RHEED oscillations observed at the beginning of growth. Comparison with prior results for carrier mobilities of doped films shows that the best films are grown under conditions of a TiO2-saturated surface [c(4 x 4) reconstruction] within the XRD growth window. (C) 2014 AIP Publishing LLC.

引用

页数：4

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