Energy transport in semiconductor devices

被引：11

作者：

Juengel, Ansgar ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Anal & Sci Comp, A-1040 Vienna, Austria

来源：

MATHEMATICAL AND COMPUTER MODELLING OF DYNAMICAL SYSTEMS | 2010年 / 16卷 / 01期

基金：

奥地利科学基金会;

关键词：

energy-transport equations; semiconductors; existence analysis; weak sequential stability; finite-element approximation; NUMERICAL-SIMULATION; ITERATIVE METHOD; MODEL; DIFFUSION; EQUATIONS; SYSTEM; DISCRETIZATION; EXISTENCE; BALANCE; SCHEME;

D O I：

10.1080/13873951003679017

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

The modelling, analysis and numerical approximation of energy-transport models for semiconductor devices are reviewed. The derivation of the partial differential equations from the semiconductor Boltzmann equation is sketched. Furthermore, the main ideas for the analytical treatment of the equations, employing thermodynamic principles, are given. A new result is the proof of the weak sequential stability of approximate solutions to some time-dependent energy-transport equations with physical transport coefficients. The discretization of the stationary model using mixed finite elements is explained, and some numerical results in two and three space dimensions are presented. Finally, energy-transport models with lattice heating or quantum corrections are reviewed.

引用

页码：1 / 22

页数：22

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