Passive modelocking in semiconductor lasers with monolithically integrated passive waveguides

被引：8

作者：

Camacho, F ^{[1
]}

Avrutin, EA ^{[1
]}

Bryce, AC ^{[1
]}

Marsh, JH ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 1998年 / 145卷 / 01期

关键词：

passive modelocking; semiconductor lasers;

D O I：

10.1049/ip-opt:19981784

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-loss passive waveguide, fabricated by quantum well intermixing (QWI), has been integrated with an active region to form a modelocked semiconductor laser with an extended passive cavity (ECL). The 4 mm-long device has a threshold current of 18 mA and, modelocking at 9.3 GHz, generates 3.5 ps wide optical pulses with jitter levels as low as 9.3 ps (1 kHz-1 MHz). The variation of the modelocking frequency with the biasing conditions of such devices is also measured and a tuning range of similar to 1% of the modelocking frequency is observed.

引用

页码：43 / 46

页数：4

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