A 90-nm CMOS Power Amplifier for 802.16e (WiMAX) Applications

被引：17
作者：
Degani, Ofir [1 ]
Cossoy, Fabian [1 ]
Shahaf, Shay [1 ]
Cohen, Emanuel [1 ]
Kravtsov, Vladimir [1 ]
Sendik, Omry [1 ]
Chowdhury, Debopriyo [2 ]
Hull, Christopher D. [1 ]
Ravid, Shmuel [1 ]
机构：
[1] Intel Corp, Mobil Wireless Grp, IL-31015 Haifa, Israel
[2] Univ Calif Berkeley, Berkeley Wireless Res Ctr, Berkeley, CA 94704 USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2010年 / 58卷 / 05期
关键词：
CMOS; crest factor reduction (CFR); 802.16e; power amplifiers (PAs); predistortion; WiMAX;
D O I：
10.1109/TMTT.2010.2042906
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we demonstrate a single-stage 90-nm CMOS power amplifier (PA) for 2.3-2.7-GHz WiMAX (802.16e) band applications. An integrated balun is used to match the output to 50-Omega load. The PA gain and saturated power (P-SAT) are +18 and +32 dBm, respectively, working from a 3.3-V supply, with a peak power-added efficiency of 48%. A digital-predistortion technique is used to enhance the PA linearity. The measured error vector magnitude for a 64 quadrature amplitude modulation orthogonal frequency-division multiplexing signal is improved from -24 to -30 dB at +25-dBm output power. Compliance with the 802.16e standard 10-MHz WiMAX mask and Federal Communications Commission regulations is demonstrated at +25-dBm of output power with power efficiency of similar to 25% and with a measured second harmonic level of -31 dBm/MHz. Using a crest factor reduction technique, mask compliance is achieved at +27 dBm with tradeoff on EVM = -dB, sufficient for quadrature phase-shift keying.
引用
收藏
页码：1431 / 1437
页数：7
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