Electrical activity of Frank partial dislocations and the influence of metallic impurities in Czochralski-grown silicon

被引：0

作者：

Shen, B ^{[1
]}

Yang, K ^{[1
]}

Chen, PG ^{[1
]}

Zhang, RG ^{[1
]}

Shi, Y ^{[1
]}

Zheng, YD ^{[1
]}

Sekiguchi, T ^{[1
]}

Sumino, K ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

CHINESE PHYSICS LETTERS | 1997年 / 14卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical activity of Frank partial dislocations bounding stacking faults and the influence of Fe impurities in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current(EBIC) technique. Frank partials free from metallic impurities exhibit EBIC contrast at low temperatures but not at room temperature, indicating that they are only accompanied with shallow energy levels in the band gap. The energy level related to a Frank partial is determined to be about E-c - 0.08 eV in n-type Si. Frank partials decorated by Fe impurities become EBIC active st room temperature.

引用

页码：436 / 439

页数：4

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