Preparation of a Bi4O5I2/Bi2O2CO3 p-n heterojunction with enhanced photocatalytic degradation performance by a one-pot solvothermal method

被引:12
作者
Xue, Lu [1 ]
Du, Yi [1 ]
Sun, Xinyue [2 ]
Jiang, Nan [3 ]
Qu, Junnan [1 ]
Zhao, Jinghong [4 ]
机构
[1] Qilu Univ Technol, Shandong Acad Sci, Key Lab Proc & Testing Technol Glass & Funct Ceram, Jinan 250353, Peoples R China
[2] Wuxi Weifu Environm Catalysts Co LTD, Wuxi 214028, Peoples R China
[3] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
[4] Aishan St Centeral Primary Sch, Jinan 271104, Shandong, Peoples R China
关键词
Photocatalysis; Degradation; p-n heterojunction; VISIBLE-LIGHT PHOTOCATALYSIS; QUANTUM DOTS; BI METAL; MECHANISM; NANOPARTICLES; BI4O5I2; BI2WO6; MICROSPHERES; ELIMINATION; FABRICATION;
D O I
10.1016/j.mssp.2021.106447
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bi4O5I2/Bi2O2CO3 p-n heterojunction photocatalysts were synthesized by utilizing different ratios of solvent via one-pot solvothermal method in the process of synthesizing Bi4O5I2 and Bi5O7I. The structure, morphology and photoelectric properties of the prepared samples were characterized by XRD, SEM, TEM, FTIR, XPS and DRS. Through the estimated photocatalytic degradation of pollutants such as tetracycline hydrochloride (TC) and rhodamine B (RhB), it was found that the Bi4O5I2/Bi2O2CO3 (the ratio of ethylene glycol and distilled water the solvent was 3/5) heterojunction photocatalyst had the highest degradation, with the removal of up to 80.6% from all prepared samples within 30 min under visible light irradiation; this heterojunction also showed better RhB degradation performance. The presence of an internal electrostatic field between the p-type semiconductor Bi4O5I2 and n-type semiconductor Bi2O2CO3 effectively suppressed the recombination of photoinduced electron-hole pairs. Moreover, a feasible mechanism was proposed.
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页数:10
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