Dislocation structure of Ge crystals grown by low thermal gradient Czochralski technique

被引：13

作者：

Trukhanov, E. M. ^{[1
]}

Fritzler, K. B. ^{[1
]}

Vasilenko, A. P. ^{[1
]}

Kolesnikov, A. V. ^{[1
]}

Kasimkin, P. V. ^{[2
]}

Moskovskih, V. A. ^{[2
]}

机构：

[1] Rzhanov Inst Semicond Phys, Pr Lavrentieva 13, Novosibirsk, Russia

[2] Novosibirsk State Tech Univ, K Marx Ave 20, Novosibirsk, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 468卷

关键词：

Characterization; Defects; X-ray topography; Semiconducting germanium; SILICON; GENERATION;

D O I：

10.1016/j.jcrysgro.2016.11.051

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Dislocation structure of the Ge single crystals grown by Czochralski method with low thermal gradient has been studied. The selective etching technique and the X-Ray transmission and reflection topography were used. Clearly defined non-uniform dislocation distribution over the crystal cross-section is revealed. Helical dislocations and sets of prismatic dislocation loops are registered. Helical dislocations perpendicular to the ingot axis are situated near the boundary between the regions with low and high dislocation densities (10(2) and 10(3) cm(-2), respectively). Their length can be as much as several millimeters. Dislocation formations lying at a 35.3 degrees to the crystal axis along < 110 > directions are also observed. These formations have the shape of prism confined by {111} planes.

引用

页码：457 / 461

页数：5

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