Injection efficiency of CHISEL gate currents in short MOS devices: Physical mechanisms, device implications, and sensitivity to technological parameters

被引：26
作者：
Esseni, D [1 ]
Selmi, L [1 ]
Ghetti, A [1 ]
Sangiorgi, E [1 ]
机构：
[1] DIEGM, I-33100 Udine, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 11期
关键词：
charge injection; CHISEL; EEPROM; hot carriers; MOSFET scaling;
D O I：
10.1109/16.877183
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper analyzes MOSFETs gate currents in the so-called channel initiated secondary electron injection regime (CHISEL), A Monte Carlo model of the phenomenon is validated and then extensively used to explore CHISEL scaling laws, Results indicate that, compared to conventional channel hot electron injection (CHE), CHISEL exhibits a weaker dependence on channel length and a larger sensitivity to short channel effects. These results are confirmed experimentally and exhaustively explained with the help of simulations; furthermore, some of their possible detrimental consequences on the programming efficiency of CHISEL based flash cells are analyzed, Finally, the impact of channel doping, oxide thickness, and junction depth on CHISEL efficiency has been explored, and guidelines to maintain high injection efficiency in short devices are derived.
引用
收藏
页码：2194 / 2200
页数：7
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