Effect Of Thickness On Electrical Properties Of SILAR Deposited SnS Thin Films

被引：3

作者：

Akaltun, Yunus ^{[1
]}

Astam, Aykut ^{[2
]}

Cerhan, Asena ^{[2
]}

Cayir, Tuba ^{[3
]}

机构：

[1] Erzincan Univ, Dept Elect & Elect Engn, Erzincan, Turkey

[2] Erzincan Univ, Dept Phys, Erzincan, Turkey

[3] Erzincan Univ, Dept Biomed Engn, Erzincan, Turkey

来源：

9TH INTERNATIONAL PHYSICS CONFERENCE OF THE BALKAN PHYSICAL UNION (BPU-9) | 2016年 / 1722卷

关键词：

SnS; semiconductors; thin films; electrical properties; CHEMICAL-VAPOR-DEPOSITION; SOLAR-CELLS;

D O I：

10.1063/1.4944233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

引用

页数：4

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