Fe3O4 and its magnetic tunneling junctions grown by ion beam deposition

被引：42

作者：

Aoshima, K ^{[1
]}

Wang, SX

机构：

[1] Fujitsu Ltd, Component Technol Dept, Magnet Component Div, Nagano, Japan

[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 10期

关键词：

D O I：

10.1063/1.1558633

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic properties of Fe3O4 and magnetic tunnel junctions with Fe3O4 bottom electrode have been investigated. Highly conductive V/Ru layers were used as an underlayer of the Fe3O4 films. The V/Ru/Fe3O4 on [110] out-of-plane oriented MgO single crystal substrate show an anisotropy and high squareness along [1 (1) over bar0] direction, while the Fe3O4 films with an underlayer of just Ru show isotropic behavior and low squareness. X-ray diffraction shows tensile stress on Fe3O4 for V/Ru/Fe3O4 samples. The anisotropy was shown to be induced by the stress. Finally, magnetic tunnel junction stacks of MgO/V/Ru/Fe3O4/AlO/CoFe/NiFe/Ru were deposited and the magnetic tunnel junctions with a junction size ranging from 2x2 mum(2) to 9x9 mum(2) were fabricated by optical lithography. The junctions show magnetoresistance ratios of similar to14% and no geometrical effect due to the junction size. (C) 2003 American Institute of Physics.

引用

页码：7954 / 7956

页数：3

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