Planar Hall effect in epitaxial thin films of magnetite

被引:17
作者
Bason, Y. [1 ]
Klein, L.
Wang, H. Q.
Hoffman, J.
Hong, X.
Henrich, V. E.
Ahn, C. H.
机构
[1] Bar Ilan Univ, Dept Phys, IL-52900 Ramat Gan, Israel
[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
关键词
D O I
10.1063/1.2712053
中图分类号
O59 [应用物理学];
学科分类号
摘要
We measured the planar Hall effect (PHE) of magnetite (Fe(3)O(4)) films between 150 and 350 K. The PHE was measured both with a constant magnetic field rotating in the plane of the sample and in a remanent state after applying a field in specific directions. The PHE amplitude decreases with temperature; however, it changes little between 300 and 350 K. The remanent PHE signal is as high as 10 V/A, larger than previously observed in manganite films. We also measured the PHE in the remanent state and found that its magnitude and stability make it a viable candidate for magnetic random access memory applications. (c) 2007 American Institute of Physics.
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页数:2
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共 15 条
  • [1] Giant planar Hall effect in colossal magnetoresistive La0.84Sr0.16MnO3 thin films
    Bason, Y
    Klein, L
    Yau, JB
    Hong, X
    Ahn, CH
    [J]. APPLIED PHYSICS LETTERS, 2004, 84 (14) : 2593 - 2595
  • [2] Planar Hall-effect magnetic random access memory
    Bason, Y
    Klein, L
    Yau, JB
    Hong, X
    Hoffman, J
    Ahn, CH
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [3] GALVANOMAGNETIC EFFECTS IN ORIENTED SINGLE CRYSTALS OF N-TYPE GERMANIUM
    BULLIS, WM
    [J]. PHYSICAL REVIEW, 1958, 109 (02): : 292 - 301
  • [4] MAGNETIC AND ELECTRIC PROPERTIES OF MAGNETITE AT LOW TEMPERATURES
    CALHOUN, BA
    [J]. PHYSICAL REVIEW, 1954, 94 (06): : 1577 - 1585
  • [5] Simultaneous detection of perpendicular and in-plane magnetization component in a [Co/Pd]n perpendicular magnetic recording media
    Das, S
    Yoshikawa, H
    Nakagawa, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (10) : 8098 - 8100
  • [6] NEW GALVANOMAGNETIC EFFECT
    GOLDBERG, C
    DAVIS, RE
    [J]. PHYSICAL REVIEW, 1954, 94 (05): : 1121 - 1125
  • [7] Planar Hall effect in magnetite (100) films
    Jin, Xuesong
    Ramos, Rafael
    Zhou, Y.
    McEvoy, C.
    Shvets, I. V.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [8] ELECTRICAL-CONDUCTION IN SINGLE-CRYSTAL FE3-YTIYO4 (0 LESS-THAN Y LESS-THAN 0.9)
    KOZLOWSKI, A
    RASMUSSEN, RJ
    SABOL, JE
    METCALF, P
    HONIG, JM
    [J]. PHYSICAL REVIEW B, 1993, 48 (04): : 2057 - 2062
  • [9] Ferromagnetic domain structure and hysteresis of exchange bias in NiFe/NiMn bilayers
    Li, GH
    Yang, T
    Hu, QW
    Jiang, HY
    Lai, W
    [J]. PHYSICAL REVIEW B, 2002, 65 (13) : 1344211 - 1344215
  • [10] Fabrication and properties of heteroepitaxial magnetite, (Fe3O4) tunnel junctions
    Li, XW
    Gupta, A
    Xiao, G
    Qian, W
    Dravid, VP
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (22) : 3282 - 3284