The effect of Er3+ doping on the physical properties of CdSe thin films deposited by chemical bath

被引：0
|
作者：
Lopez-Flores, R. B.
Portillo-Moreno, O.
Lozada-Morales, R.
Palomino-Merino, R.
Espinosa, M. A. Hernandez
Zabello, N. Korneev
Hernandez, A. G. Rojas
Tomas, S. A.
Zelaya-Anuel, O.
机构：
[1] Univ Autonoma Puebla, Fac Ciencias Elect, Puebla 72570, Mexico
[2] Univ Autonoma Puebla, Fac Ciencias Quim, Puebla 72570, Mexico
[3] Univ Autonoma Puebla, Fac Ciencias Fis Matemat, Dept Inv Zeolitas, Puebla 72570, Mexico
[4] Inst Nacl Astrofis Opt & Electr, Puebla 72000, Mexico
[5] IPN, CINVESTAV, Dept Fis, Mexico City 07360, DF, Mexico
来源：
REVISTA MEXICANA DE FISICA | 2006年 / 52卷 / 02期
关键词：
II-VI semiconductor; chemical bath deposition; rare earths; thin films;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
CdSe thin films were prepared by a chemical bath on glass substrates and doped with erbiuin during the growing process at 70 degrees C. Eight impurity levels were obtained by changing the relative volume of the salt Solution containing Er in the total CdSe growing solution. The relative Volume of the Er-salt solution had the values: 2, 5, 8, 10, 15, 18, 25 and 30%. The electrical, Structural, optical and photoconductive properties were characterized. Important changes in the energy hand gap, in the photoconductance, and in the refractive index were observed in the CdSe layers as a result of the concentration level of Er in the semiconductor.
引用
收藏
页码：39 / 41
页数：3
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