Experimental and simulation study for impact of different halides on the performance of planar perovskite solar cells

被引:42
作者
Elseman, A. M. [1 ]
Shalan, A. E. [1 ]
Rashad, M. M. [1 ]
Hassan, A. M. [2 ]
机构
[1] Cent Met Res & Dev Inst, Adv Mat Div, Elect & Magnet Mat Dept, POB 87 Helwan, Cairo 11421, Egypt
[2] Al Azhar Univ, Fac Sci, Chem Dept, Cairo, Egypt
关键词
Organolead halide Perovskite; Solar cell; Grinding synthesis; wxAMPS; Simulation; THIN-FILM; PHASE-TRANSITIONS; HOLE TRANSPORT; CH3NH3PBX3; X; BR; NANOPARTICLES; EMISSION; ELECTRON; VOLTAGE; MODEL;
D O I
10.1016/j.mssp.2017.04.022
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
MeA-PbX3 and MeA-PbI2X (where MeA = CH3NH3; X=I, Br, Cl) systems have been synthesized using grinding processing. Plainly, the crystal structures of the perovskite materials were altered with the variation of the halide ions. Meanwhile, the band gap energy was enhanced from 1.5 eV for MeA-PbI3 to 2.1 and 2.8 eV for MeA-PbBr3 and MeA-PbCl3 as a result of substitution by halide Br and Cl, respectively. The intensity peaks of different perovskite structures were confirmed by photoluminescence (PL). Furthermore, the following energy parameters, heat of formation, high occupied molecular orbital (HOMO) and low unoccupied molecular orbital (LUMO) were evaluated using hyperchem system software. Herein, we performed a device modeling and theoretical study on planar perovskite solar cells without a hole transporting material (HTM) using a solar cell simulation program (wxAMPS) as an update of the popular solar cell simulation tool (AMPS; Analysis of Microelectronic and Photonic Structures). Simulation and experimental design of MeA-PbX3 and MeA-PbI2X (where MeA = CH3NH3; X = I, Br, Cl) systems were investigated. The cells without HTM have been suggested to enhance the low cost and simple assembly of organic-inorganic lead halide perovskite based solar cells. MeAPbBr(3) with HTM-free solar cells was achieved a high PCE of 13.96% in simulation program compared to 3.88% as experimental one.
引用
收藏
页码:176 / 185
页数:10
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