Two-Dimensional WSe2/Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping

被引:30
作者
Liu, Haining [1 ,2 ]
Cui, Menghua [1 ,2 ]
Dang, Chunhe [1 ,2 ]
Wen, Wen [1 ,2 ]
Wang, Xinsheng [1 ]
Xie, Liming [1 ,2 ]
机构
[1] Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
关键词
two-dimensional material; WSe2; nonvolatile memory; electron acceptor; interface charge transfer; GRAPHENE; HYSTERESIS;
D O I
10.1021/acsami.9b11998
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional (2D) materials, with atomic thickness and unique electronic structure, hold great potentials in electronic device applications. Charge transfer at the interface of 2D materials further provides a versatile platform for applications in electronics. Here, we report nonvolatile memory devices based on interface charge trapping between 2D WSe2 and organic electron acceptors. The 2D WSe2-organic acceptor hybrid structure exhibits a high storage performance, such as large gate memory windows, high on/off ratios (>10(3)), and long retention time (>1000 s). Further analysis revealed that organic acceptors with a stronger electron affinity (i.e., higher redox potential) have a larger electron-trapping ability and hence a better memory performance.
引用
收藏
页码:34424 / 34429
页数:6
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