Two critical grain sizes of Ba0.6Sr0.4TiO3 thin films

被引：5

作者：

Chen, Hongwei ^{[1
]}

Yang, Chuanren ^{[1
]}

Zhang, Jihua ^{[1
]}

Leng, Wenjian ^{[1
]}

Ji, Hong ^{[1
]}

Wang, Zhihong ^{[1
]}

Liao, Jiaxuan ^{[1
]}

Zhao, Li ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2010年 / 21卷 / 03期

基金：

中国国家自然科学基金;

关键词：

PHASE-TRANSITIONS; LEAD-TITANATE; DOMAINS;

D O I：

10.1007/s10854-009-9898-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ba0.6Sr0.4TiO3 (short for BST) thin films were prepared by RF magnetron sputtering. By adjusting annealing conditions, the BST thin films with different grain sizes were obtained. The microstructures of BST thin films were studied by X-ray diffraction (XRD), atomic force microscopy (AFM), and high-resolution transmission electron microscopy (HRTEM). It is found that there are two critical sizes in BST thin films in relation to grain sizes. The crystalline critical size from amorphous to crystalline is about 10 nm. The ferroelectric critical size from cubic (paraelectric) to tetragonal (ferroelectric) is about 20 nm.

引用

页码：236 / 240

页数：5

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