Emission layer of F4TCNQ-Doped nanorods for high-efficient red light-emitting diodes

被引：4
作者：
Zhang, Wenjing [1 ]
Zhang, Qin [1 ]
Sun, Hao [1 ]
Yang, Min [1 ]
Li, Fangfang [1 ]
Zhang, Yubao [1 ]
Qin, Yuancheng [2 ]
Zhou, Dan [2 ]
Yang, Liang [3 ]
Zhang, Zhenwei [1 ]
Jiang, Ying [1 ]
Zhong, Wei [4 ]
机构：
[1] Nanchang Hangkong Univ, Jiangxi Engn Lab Optoelect Testing Technol, Nanchang 330063, Jiangxi, Peoples R China
[2] Nanchang Hangkong Univ, Sch Environm & Chem Engn, Nanchang 330063, Jiangxi, Peoples R China
[3] Xiamen Univ Technol, Coll Mat Sci & Engn, Key Lab Funct Mat & Applicat Fujian Prov, Xiamen 361024, Fujian, Peoples R China
[4] Nanchang Hangkong Univ, Sch Mat Sci & Engn, Nanchang 330063, Jiangxi, Peoples R China
来源：
ORGANIC ELECTRONICS | 2020年 / 76卷 / 76期
关键词：
Quantum dot light-emitting diodes; Nanorods; Dopant; HIGH-BRIGHTNESS; QUANTUM DOTS; CDSE; NANOCRYSTALS; MECHANISMS;
D O I：
10.1016/j.orgel.2019.105460
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The emission layer (EML) of nanorods is doped with p-type 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F(4)TCNQ) to improve performances of quantum dot light-emitting diodes. The hole-electron balance has been found to enhance in these devices. This has been attributed to increase in hole transport and decrease in electron transport. F(4)TCNQ also helps to form a more close-packed film and decreases the percentage of voids in EML from 9.5% to 1.3%. It makes good contact between the EML and other functional layers. As a result, the optimized device acquires the 68% enhancement in external quantum efficiency to 11.6% and 85% enhancement in luminance to 16222 cd/m(2), respectively.
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页数：6
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