Tip-enhanced fluorescence microscopy at 10 nanometer resolution

被引：195
作者：
Gerton, JM
Wade, LA
Lessard, GA
Ma, Z
Quake, SR
机构：
[1] CALTECH, Dept Appl Phys, Pasadena, CA 91125 USA
[2] Univ Utah, Dept Phys, Salt Lake City, UT 84112 USA
来源：
PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 18期
关键词：
D O I：
10.1103/PhysRevLett.93.180801
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate unambiguously that the field enhancement near the apex of a laser-illuminated silicon tip decays according to a power law that is moderated by a single parameter characterizing the tip sharpness. Oscillating the probe in intermittent contact with a semiconductor nanocrystal strongly modulates the fluorescence excitation rate, providing robust optical contrast and enabling excellent background rejection. Laterally encoded demodulation yields images with <10 nm spatial resolution, consistent with independent measurements of tip sharpness.
引用
收藏
页码：180801 / 1
页数：4
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