Selective-Area Atomic Layer Deposition Using Poly(vinyl pyrrolidone) as a Passivation Layer

被引：67

作者：

Farm, Elina ^{[1
]}

Kemell, Marianna ^{[1
]}

Santala, Eero ^{[1
]}

Ritala, Mikko ^{[1
]}

Leskela, Markku ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2010年 / 157卷 / 01期

关键词：

SELF-ASSEMBLED MONOLAYERS; TITANIUM-DIOXIDE; FILMS; ALD; GROWTH; OXIDE;

D O I：

10.1149/1.3250936

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Selective-area atomic layer deposition (ALD) was studied using poly (vinyl pyrrolidone) (PVP) films as growth-preventing mask layers. The PVP films were prepared by spin coating and patterned by UV lithography. The PVP films were tested in several ALD processes: iridium, platinum, ruthenium, Al2O3, and ZrO2. The deposition temperatures were 250-300 degrees C. In general, the PVP film passivated the surface against the noble metal processes, but the oxide films grew on PVP. However, the oxide films did not grow through the PVP film on the substrate surface and, therefore, the films could still be patterned, though with more of a lift-off method rather than with pure selective-area ALD. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3250936] All rights reserved.

引用

收藏

页码：K10 / K14

页数：5

相关论文

共 31 条

[1] Atomic layer deposition of iridium thin films [J].

Aaltonen, T ;

Ritala, M ;

Sammelselg, V ;

Leskelä, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (08) :G489-G492

[2] Atomic layer deposition of platinum thin films [J].

Aaltonen, T ;

Ritala, M ;

Sajavaara, T ;

Keinonen, J ;

Leskelä, M .

CHEMISTRY OF MATERIALS, 2003, 15 (09) :1924-1928

[3] Ruthenium thin films grown by atomic layer deposition [J].

Aaltonen, T ;

Alén, P ;

Ritala, M ;

Leskelä, M .

CHEMICAL VAPOR DEPOSITION, 2003, 9 (01) :45-49

[4] Chemistry for positive pattern transfer using area-selective atomic layer deposition [J].

Chen, R ;

Bent, SF .

ADVANCED MATERIALS, 2006, 18 (08) :1086-+

[5] Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-κ gate dielectrics [J].

Chen, R ;

Kim, H ;

McIntyre, PC ;

Bent, SF .

APPLIED PHYSICS LETTERS, 2004, 84 (20) :4017-4019

[6] Selective-area atomic layer deposition using poly(methyl methacrylate) films as mask [J].

Farm, Elina ;

Kemell, Marianna ;

Ritala, Mikko ;

Leskela, Markku .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (40) :15791-15795

[7] Self-assembled octadecyltrimethoxysilane monolayers enabling selective-area atomic layer deposition of iridium [J].

Farm, Elina ;

Kemell, Marianna ;

Ritala, Mikko ;

Leskela, Markku .

CHEMICAL VAPOR DEPOSITION, 2006, 12 (07) :415-+

[8] Selective-area atomic layer deposition with microcontact printed self-assembled octadecyltrichlorosilane monolayers as mask layers [J].

Farm, Elina ;

Kemell, Marianna ;

Ritala, Mikko ;

Leskela, Markku .

THIN SOLID FILMS, 2008, 517 (02) :972-975

[9] Low-temperature Al2O3 atomic layer deposition [J].

Groner, MD ;

Fabreguette, FH ;

Elam, JW ;

George, SM .

CHEMISTRY OF MATERIALS, 2004, 16 (04) :639-645

[10] Nanopatterning materials using area selective atomic layer deposition in conjunction with thermochemical surface modification via heated AFM cantilever probe lithography [J].

Hua, Yueming ;

King, William P. ;

Henderson, Clifford L. .

MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) :934-936

← 1 2 3 4 →