A Compact Current-Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect

被引：146

作者：

Cao, Wei ^{[1
]}

Kang, Jiahao ^{[1
]}

Liu, Wei ^{[1
]}

Banerjee, Kaustav ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 12期

关键词：

2D field-effect transistor (FET); 2D semiconductors; compact modeling; interface trap; molybdenum disulphide (MoS2); transition metal dichalcogenide (TMD); tungsten diselenide (WSe2);

D O I：

10.1109/TED.2014.2365028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an analytical current-voltage model specifically formulated for 2-dimensional (2D) transition metal dichalcogenide (TMD) semiconductor based field-effect transistors (FETs). The model is derived from the fundamentals considering the physics of 2D TMD crystals, and covers all regions of the FET operation (linear, saturation, and subthreshold) under a continuous function. Moreover, three issues of great importance in the emerging 2D FET arena: interface traps, mobility degradation, and inefficient doping have been carefully considered. The compact models are verified against 2-D device simulations as well as experimental results for state-of-the-art top-gated monolayer TMD FETs, and can be easily employed for efficient exploration of circuits based on 2D FETs as well as for evaluation and optimization of 2D TMD-channel FET design and performance.

引用

页码：4282 / 4290

页数：9

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