Evaluation of energy barriers for topological transitions of Si self-interstitial clusters by classical molecular dynamics and the kinetic activation-relaxation technique

被引：0

作者：

Lopez, Pedro ^{[1
]}

Ruiz, D. C. ^{[2
]}

Santos, I. ^{[1
]}

Aboy, M. ^{[1
]}

Marques, L. A. ^{[1
]}

Trochet, M. ^{[3
]}

Mousseau, N. ^{[3
]}

Pelaz, L. ^{[1
]}

机构：

[1] Univ Valladolid, Dept Elect & Elect, ETSI Telecomunicac, Paseo Belen 15, E-47011 Valladolid, Spain

[2] Swiss Fed Inst Technol, Dept Informat Technol & Elect Engn, Gloriastr 35, CH-8092 Zurich, Switzerland

[3] Univ Montreal, Dept Phys & Regrp Quebecois Mat Pointe, CP 6128,Succ Ctr Ville, Montreal, PQ H3C 3J7, Canada

来源：

2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE) | 2017年

关键词：

silicon; self-interstitial cluster; configurational transition; energy barrier; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The modeling of self-interstitial defects evolution is key for process and device optimization. For a self-interstitial cluster of a given size, several configurations or topologies exist, but conventional models assume that the minimum energy one is instantaneously reached. The existence of significant energy barriers for configurational transitions may change the picture of defect evolution in non-equilibrium processes (such as ion implantation), and contribute to explain anomalous defect observations. In this work, we present a method to determine the energy barriers for topological transitions among small self-interstitial defects, which is applied to characterize the Si self-interstitial and the di-interstitial cluster.

引用

页数：4

共 14 条

[1] Event-based relaxation of continuous disordered systems [J].