Type conversion of n-type silicon nanowires to p-type by diffusion of gold ions

被引：9

作者：

Koo, Jamin

Lee, Myeongwon

Kang, Jeongmin

Yoon, Changjoon

Kim, Kwangeun

Jeon, Youngin

Kim, Sangsig ^{[1
]}

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 04期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; ELECTRONICS; BEHAVIOR;

D O I：

10.1088/0268-1242/25/4/045010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The simple type conversion of n-type silicon nanowires (SiNWs) to p-type by the diffusion of Au ions is demonstrated in this study. An Au thin film with a thickness of 10 nm was thermally deposited on an n-type SiNW and a rapid thermal annealing process was performed subsequently to diffuse the Au ions into the SiNW. The electrical characteristics of a back-gate field-effect transistor with a channel composed of the Au-diffused SiNW show that the Au-diffused SiNW acts as a p-type one. The type conversion phenomenon of the SiNW caused by the diffusion of Au ions is discussed in detail in this paper.

引用

页数：6

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