High-quality 1.3 μm GaInNAs single quantum well lasers grown by MBE

被引：19

作者：

Wang, XD ^{[1
]}

Wang, SM ^{[1
]}

Wei, YQ ^{[1
]}

Sadeghi, M ^{[1
]}

Larsson, A ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci MC2, Photon Lab, SE-41296 Gothenburg, Sweden

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 21期

关键词：

D O I：

10.1049/el:20046557

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality 1.3 mum GaInNAs/GaNAs single quantum well lasers grown by molecular beam epitaxy are reported. The broad area lasers show a record low threshold current density of 318 A/cm(2) for a cavity length of 1 mm, a transparent current density of 84 A/cm(2). and a characteristic temperature of 103 K from 8 to 70degreesC.

引用

页码：1338 / 1339

页数：2

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