Transparent thin-film transistor with self-assembled nanocrystals

被引:8
作者
Zhang, Qiaohui
Saraf, L. V.
Hua, Feng [1 ]
机构
[1] Clarkson Univ, Dept Elect & Comp Engn, Potsdam, NY 13699 USA
[2] Pacific NW Natl Lab, Richland, WA 99352 USA
关键词
D O I
10.1088/0957-4484/18/19/195204
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The paper presents the fabrication of transparent devices using nanofabrication and nanomaterials. Clear and functional structures can be constructed over a large area with highly transparent nanocrystals via layer-by-layer self-assembly. The 12 nm SnO2 and SiO2 nanocrystals can form ultra-thin and uniform multilayers, serving as the active and insulating layers, respectively. Transistors fabricated by this method have a high optical transparency and reliable electrical performance. The averaged optical transmittance is higher than 85%. The usage of nanofabrication and nanomaterials solves some of the current fabricating problems for transparent devices. This technique is applicable to other transistor devices and circuits.
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页数:5
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