Strained In0.53Ga0.47As/InxGa1-xAs (X>0.6) multiquantum well thermophotovoltaic converters

被引：2

作者：

Serdiukova, I ^{[1
]}

Newman, F ^{[1
]}

Aguillar, L ^{[1
]}

Vilela, MF ^{[1
]}

Monier, C ^{[1
]}

Freundlich, A ^{[1
]}

机构：

[1] Univ Houston, Ctr Space Vacuum Epitaxy, Houston, TX 77204 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654248

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work a new thermophotovoltaic converter is investigated. Strained narrow band gap InxGa1-xAs/In0.47Ga0.53As (x>0.6) multiple quantum wells (MQW) are introduced within the intrinsic region of a conventional In0.47Ga0.53As p-i-n cell lattice matched to InP. An appropriate choice of well/barrier thickness and number of wells in the i-region maintains the pseudomorphism and lattice matching to InP, while, the presence of narrow band gap wells extends photon absorption up to that of confined energy states in wells. For a low temperature black body emitters (1200-1500K) this new device conversion efficiency is predicted to exceed twice that of its conventional counterpart.

引用

页码：963 / 966

页数：4

Strained In0.53Ga0.47As/InxGa1-xAs (X&gt;0.6) multiquantum well thermophotovoltaic converters

Strained In0.53Ga0.47As/InxGa1-xAs (X>0.6) multiquantum well thermophotovoltaic converters