Transparent Flexible Zinc-Indium-Tin Oxide Thin-Film Transistors Fabricated on Polyarylate Films

被引:13
作者
Cheong, Woo-Seok [1 ]
Bak, Jun-Yong [1 ,2 ]
Kim, Hong Seung [2 ]
机构
[1] ETRI, Transparent Display Team, Taejon 305350, South Korea
[2] Korea Maritime Univ, Pusan 606791, South Korea
关键词
D O I
10.1143/JJAP.49.05EB10
中图分类号
O59 [应用物理学];
学科分类号
摘要
Transparent flexible displays can be realized using active matrix organic light emitting device (AMOLED) with transparent electrodes on transparent plastic substrates. In this study, we developed low-temperature, high-performance [ZITO, ZnO : In2O3 : SnO2 = 3 : 1 : 1 molar ratio] thin-film transistors (TFTs) on polyarylate films. After optimizing the sputtering condition, the ZITO TFT with an ITO electrode had a high mobility of 16.93 cm(2) V-1 s(-1), and an SS of 0.39, while the ZITO TFT with a ZTO: B electrode showed no hysteresis on sweeping, a mobility of 2.29 cm(2) V-1 s(-1) and an SS of 0.18. (C) 2010 The Japan Society of Applied Physics
引用
收藏
页码:05EB101 / 05EB104
页数:4
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