Transparent Flexible Zinc-Indium-Tin Oxide Thin-Film Transistors Fabricated on Polyarylate Films

被引：13

作者：

Cheong, Woo-Seok ^{[1
]}

Bak, Jun-Yong ^{[1
,2
]}

Kim, Hong Seung ^{[2
]}

机构：

[1] ETRI, Transparent Display Team, Taejon 305350, South Korea

[2] Korea Maritime Univ, Pusan 606791, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 05期

关键词：

D O I：

10.1143/JJAP.49.05EB10

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent flexible displays can be realized using active matrix organic light emitting device (AMOLED) with transparent electrodes on transparent plastic substrates. In this study, we developed low-temperature, high-performance [ZITO, ZnO : In2O3 : SnO2 = 3 : 1 : 1 molar ratio] thin-film transistors (TFTs) on polyarylate films. After optimizing the sputtering condition, the ZITO TFT with an ITO electrode had a high mobility of 16.93 cm(2) V-1 s(-1), and an SS of 0.39, while the ZITO TFT with a ZTO: B electrode showed no hysteresis on sweeping, a mobility of 2.29 cm(2) V-1 s(-1) and an SS of 0.18. (C) 2010 The Japan Society of Applied Physics

引用

页码：05EB101 / 05EB104

页数：4

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