Distributed amplifiers with non-uniform filtering structures

被引:0
作者
Zhu, Yunliang [2 ]
Wu, Hui [1 ]
机构
[1] Univ Rochester, Dept Elect & Comp Engn, 601 Elmwood Ave, Rochester, NY 14627 USA
[2] Univ Rochester, Lab Adv Integrated Circuits & Syst, Rochester, NY 14627 USA
来源
2006 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM | 2006年
关键词
CMOS; distributed amplifiers; filtering functions; wideband;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a new design concept to better control both passband and stop-band characteristics of distributed amplifiers (DAs) by using non-uniform filtering structures instead of conventional constant-k sections. Two circuit prototypes with Butterworth and Chebyshev filtering were designed using network synthesis method, and implemented in a 0.18 mu m digital CMOS technology. The Butterworth prototype achieved 11.7dB gain, 9GHz bandwidth, and -5.dB/GHz roll-off. The Chebyshev one achieved 10dB gain, 8.5GHz bandwidth and -8dB/GHz roll-off.
引用
收藏
页码:325 / 328
页数:4
相关论文
共 9 条
[1]   A 27 GHz fully integrated CMOS distributed amplifier using coplanar waveguides [J].
Amaya, RE ;
Tarr, NG ;
Plett, C .
2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2004, :193-196
[2]   A MONOLITHIC GAAS 1-13-GHZ TRAVELING-WAVE AMPLIFIER [J].
AYASLI, Y ;
MOZZI, RL ;
VORHAUS, JL ;
REYNOLDS, LD ;
PUCEL, RA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :976-981
[3]   A fully integrated 0.5-5.5-GHz CMOS distributed amplifier [J].
Ballweber, BM ;
Gupta, R ;
Allstot, DJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (02) :231-239
[4]   MESFET DISTRIBUTED-AMPLIFIER DESIGN GUIDELINES [J].
BEYER, JB ;
PRASAD, SN ;
BECKER, RC ;
NORDMAN, JE ;
HOHENWARTER, GK .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) :268-275
[5]   DISTRIBUTED AMPLIFICATION [J].
GINZTON, EL ;
HEWLETT, WR ;
JASBERG, JH ;
NOE, JD .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1948, 36 (08) :956-969
[6]   A 12dBm 320GHz GBW distributed amplifier in a 0.12μm SOICMOS [J].
Kim, J ;
Plouchart, JO ;
Zamdmer, N ;
Trzcenski, R ;
Groves, R ;
Sherony, M ;
Tan, Y ;
Talbi, M ;
Safran, J ;
Wagner, L .
2004 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE, DIGEST OF TECHNICAL PAPERS, 2004, 47 :478-479
[7]  
Liu RC, 2003, IEEE RAD FREQ INTEGR, P103, DOI 10.1109/RFIC.2003.1213903
[8]  
MATTHAEI G, 1998, MICROWAVE FILTERS IM
[9]  
YAZDI A, 2005, IEEE ISSCC, P156