Accurate extraction of conduction parameter in MOSFETs on si(110) surface

被引：0

作者：

Gaubert, P. ^{[1
]}

Teramoto, A. ^{[1
]}

Hamada, T. ^{[2
]}

Suwa, T. ^{[2
]}

Ohmi, T. ^{[1
]}

机构：

[1] Tohoku Univ, New Ind Creat Hatchery Ctr, Sendai, Miyagi 9808579, Japan

[2] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

mobility attenuation factor; MOS transistor; surface orientation; mobility; silicon;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports for the first time the intrinsic mobility attenuation factor for p-channel MOSFETs fabricated on (110) crystallographic oriented silicon. It has been demonstrated that some extraction methods working well for the conventional orientation cannot be applied anymore when it comes to the (I 10) orientation. The intrinsic attenuation factor found for the new orientation is ten times smaller than for the conventional one. Then the channel mobility of Si(110) p-MOSFETs is much less sensitive to the effective electric field variations than the Si(100) p-MOSFETs meaning that the shift to higher effective electric field coming from a higher doping concentration in the channel will affect in much less proportion the hole mobility of p-MOSFETs based on (110) oriented silicon.

引用

页码：1393 / +

页数：2

共 6 条

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