Semiconductor spintronics

被引：110

作者：

Akinaga, H ^{[1
]}

Ohno, H

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanotechnol Res Inst, Tsukuba 3058562, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2002年 / 1卷 / 01期

基金：

日本学术振兴会;

关键词：

ferromagnetic semiconductors; magnetooptic (MO) devices; magnetoresistive devices; quantum information; spin coherence;

D O I：

10.1109/TNANO.2002.1005423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review recent, progress made in the field of semiconductor spintronics, a branch of semiconductor electronics where both charge and spin degrees of freedom play an important role in realizing unique functionalities. We first describe the new spin-dependent phenomena. found in semiconductors including carrier-induced ferromagnetism in III-V compounds, followed by an account of our current understanding of such spin-dependent phenomena. Then we summarize the challenges the semiconductor spintronics has to meet in order for it to be a success as "electronics."

引用

页码：19 / 31

页数：13

共 139 条

[91] Electric-field control of ferromagnetism [J].

Ohno, H ;

Chiba, D ;

Matsukura, F ;

Omiya, T ;

Abe, E ;

Dietl, T ;

Ohno, Y ;

Ohtani, K .

NATURE, 2000, 408 (6815) :944-946

[92]

OHNO H, 2002, JPN SOC APPL PHYS IN, V4, P4

[93] Spin relaxation in GaAs(110) quantum wells [J].

Ohno, Y ;

Terauchi, R ;

Adachi, T ;

Matsukura, F ;

Ohno, H .

PHYSICAL REVIEW LETTERS, 1999, 83 (20) :4196-4199

[94] Electrical spin injection in a ferromagnetic semiconductor heterostructure [J].

Ohno, Y ;

Young, DK ;

Beschoten, B ;

Matsukura, F ;

Ohno, H ;

Awschalom, DD .

NATURE, 1999, 402 (6763) :790-792

[95] Core-level photoemission study of Ga1-xMnxAs [J].

Okabayashi, J ;

Kimura, A ;

Rader, O ;

Mizokawa, T ;

Fujimori, A .

PHYSICAL REVIEW B, 1998, 58 (08) :R4211-R4214

[96]

ONODERA K, 2000, MAT INTEGRATION, V13, P57

[97] Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN [J].

Overberg, ME ;

Abernathy, CR ;

Pearton, SJ ;

Theodoropoulou, NA ;

McCarthy, KT ;

Hebard, AF .

APPLIED PHYSICS LETTERS, 2001, 79 (09) :1312-1314

[98] A group-IV ferromagnetic semiconductor:: MnxGe1-x [J].

Park, YD ;

Hanbicki, AT ;

Erwin, SC ;

Hellberg, CS ;

Sullivan, JM ;

Mattson, JE ;

Ambrose, TF ;

Wilson, A ;

Spanos, G ;

Jonker, BT .

SCIENCE, 2002, 295 (5555) :651-654

[99] Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs [J].

Potashnik, SJ ;

Ku, KC ;

Chun, SH ;

Berry, JJ ;

Samarth, N ;

Schiffer, P .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1495-1497

[100] Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem [J].

Rashba, EI .

PHYSICAL REVIEW B, 2000, 62 (24) :R16267-R16270

← 5 6 7 8 9 10 11 12 13 14 →