Semiconductor Bloch-equations formalism: Derivation and application to high-harmonic generation from Dirac fermions

被引：35

作者：

Wilhelm, Jan ^{[1
]}

Groessing, Patrick ^{[1
]}

Seith, Adrian ^{[1
]}

Crewse, Jack ^{[1
,2
]}

Nitsch, Maximilian ^{[1
]}

Weigl, Leonard ^{[3
]}

Schmid, Christoph ^{[3
]}

Evers, Ferdinand ^{[1
]}

机构：

[1] Univ Regensburg, Inst Theoret Phys, Univ Str 31, D-93053 Regensburg, Germany

[2] Missouri Univ Sci & Technol, Dept Phys, Rolla, MO 65409 USA

[3] Univ Regensburg, Inst Expt & Appl Phys, Univ Str 31, D-93053 Regensburg, Germany

来源：

PHYSICAL REVIEW B | 2021年 / 103卷 / 12期

基金：

美国国家科学基金会;

关键词：

DYNAMICS; INTRABAND; ELECTRONS; INTERBAND;

D O I：

10.1103/PhysRevB.103.125419

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We rederive the semiconductor Bloch equations emphasizing the close link to the Berry connection. Our rigorous derivation reveals the existence of two further contributions to the current, in addition to the frequently considered intraband and polarization-related interband terms. The extra contributions become sizable in situations with strong dephasing or when the dipole-matrix elements are strongly wave-number dependent. We apply the formalism to high-harmonic generation for a Dirac metal. The extra terms add to the frequency-dependent emission intensity (high-harmonic spectrum) significantly at certain frequencies changing the total signal up to a factor of 10.

引用

页数：19

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