Optical properties of exciton charge states in InGaAs quantum dots grown by metalorganic chemical vapor deposition

被引：0

作者：

Chang, H. -S. ^{[1
]}

Chang, W. -H. ^{[1
]}

Chen, W. -Y. ^{[1
]}

Hsieh, T. -P. ^{[2
]}

Chyi, J. -I. ^{[2
]}

Hsu, T. M. ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Phys, Jhongli 32001, Taiwan

[2] Natl Cent Univ, Dept Elect Engn, Taipei 32001, Taiwan

来源：

PHYSICS OF SEMICONDUCTORS, PTS A AND B | 2007年 / 893卷

关键词：

self-assembled quantum dots; microphotoluminescence; photon antibunching; single photon sources;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of residual impurities on neutral and charged exciton complexes in single InGaAs quantum dots (QDs) grown by metalorganic chemical vapor deposition were investigated. We show that the formation of a charged exciton can be controlled by using resonant excitation to the residual impurity level. This optical excitation scheme is useful for the selective generation only charged excitons in initially neutral QDs without sophisticated sample designs.

引用

页码：881 / +

页数：2

共 4 条

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