Greatly enhanced performance of AlGaN-based deep ultraviolet light emitting diodes by introducing a polarization modulated electron blocking layer

被引：25

作者：

Lang, J. ^{[1
,2
]}

Xu, F. J. ^{[1
,2
]}

Ge, W. K. ^{[1
,2
]}

Liu, B. Y. ^{[1
,2
]}

Zhang, N. ^{[1
,2
]}

Sun, Y. H. ^{[1
,2
]}

Wang, J. M. ^{[1
,2
]}

Wang, M. X. ^{[1
,2
]}

Xie, N. ^{[1
,2
]}

Fang, X. Z. ^{[1
,2
]}

Kang, X. N. ^{[1
,2
]}

Qin, Z. X. ^{[1
,2
]}

Yang, X. L. ^{[1
,2
]}

Wang, X. Q. ^{[1
,2
,3
]}

Shen, B. ^{[1
,2
,3
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Peking Univ, Minist Educ, Nanooptoelect Frontier Ctr, Beijing 100871, Peoples R China

[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 20期

基金：

中国国家自然科学基金;

关键词：

HOLE INJECTION;

D O I：

10.1364/OE.27.0A1458

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Carrier transport in AlGaN-based deep ultraviolet (DUV) light emitting diodes (LEDs) with the wavelength of 273 nm has been investigated by introducing polarization modulated electron blocking layer (EBL) that adopts an Al composition and thickness graded multiple quantum barriers (MQB) structure. The experimental result shows that the maximum light output power and external quantum efficiency for the proposed structure at the current of 250 mA are 9.6 mW and 1.03% respectively, severally increasing by 405% and 249% compared to traditional one, meanwhile, the efficiency droop at 250 mA is also dramatically reduced from 42.2% to 16.6%. Further simulation analysis indicates that this graded MQB-EBL enhances the potential barrier height for electrons and meanwhile reduces that for holes, hence effectively suppresses the electron leakage, and at the same time significantly improves the hole injection efficiency. As a result, the whole performance of the LED with the proposed MQB-EBL is dramatically improved. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：A1458 / A1466

页数：9

共 17 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].