Applications of single-wafer thermal processing to 0.15-μm high-density MROM

被引：2

作者：

Hsu, SY ^{[1
]}

Wang, TY ^{[1
]}

Shih, HH ^{[1
]}

Chen, KC ^{[1
]}

Hwang, YL ^{[1
]}

Hsueh, CC ^{[1
]}

Chung, H ^{[1
]}

Pan, S ^{[1
]}

Lu, CY ^{[1
]}

机构：

[1] Macronix Int Co Ltd, Si Lab, Adv Module Proc Dev, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING | 2003年 / 16卷 / 02期

关键词：

integrity; ISSG; mask ROM; single-wafer;

D O I：

10.1109/TSM.2003.810938

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Feasibility of single-wafer rapid-thermal process as an alternative to the conventional batch-type furnace process is evaluated on a 0.15-mum 128-Mb mask read only memory (MROM) product. Excellent gate oxide,integrity and device characteristics are achieved with a single-wafer rapid-thermal process. Superior yield and. product reliability by using single-Wafer process tool have also been achieved. Shortened process cycle time and bitter thermal process uniformity by using single-wafer rapid-thermal processing are demonstrated.

引用

页码：147 / 154

页数：8