Tunneling Anisotropic Magnetoresistance in Fe Nanoparticles Embedded in MgO Matrix

被引：3
作者：
Pham, T. V. [1 ,2 ]
Miwa, S. [1 ]
Suzuki, Y. [1 ]
机构：
[1] Osaka Univ, Grad Sch Engn Sci, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan
[2] Vietnam Acad Sci & Technol, Inst Mat Sci, 18 Hoang Quoc Viet, Hanoi, Vietnam
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2016年 / 45卷 / 05期
关键词：
Tunnel anisotropic magnetoresistance; tunnel magnetoresistance; tunnel junction; ferromagnetic nanoparticles; ROOM-TEMPERATURE; JUNCTIONS;
D O I：
10.1007/s11664-016-4428-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The tunnel magnetoresistance (TMR) effect is related to the relative orientation of the magnetizations of the two ferromagnetic electrodes in magnetic tunnel junctions (MTJs). The tunnel anisotropic magnetoresistance (TAMR) effect is related to the orientation of the magnetization with respect to the current direction or the crystallographic axes. Beyond the TMR, the TAMR is not only present in MTJs in which both electrodes are ferromagnetic but may also appear in tunnel structures with a single magnetic electrode. We investigated the magnetotransport properties in an Au/MgO/Fe nanoparticles/MgO/Cu tunnel junction. We found that both the TMR and TAMR can appear in tunnel junctions with Fe nanoparticles embedded in an MgO matrix. The TMR is attributed to spin-dependent tunneling between Fe nanoparticles, so the device resistance depends on the magnetization directions of adjacent Fe nanoparticles. The TAMR is attributed to the interfacial spin-orbit interaction, so the device resistance depends on each magnetization direction of an Fe nanoparticle. This is the first observation of the TAMR in Fe nanoparticles embedded in an MgO matrix.
引用
收藏
页码：2597 / 2600
页数：4
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